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Speeding up the solution of the Bethe-Salpeter equation by a double-grid method and Wannier interpolation

机译:通过双网格加速Bethe-salpeter方程的解   方法和万尼尔插值

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摘要

The Bethe-Salpeter equation is a widely used approach to describe opticalexcitations in bulk semiconductors. It leads to spectra that are in very goodagreement with experiment, but the price to pay for such accuracy is a veryhigh computational burden. One of the main bottlenecks is the large number ofk-points required to obtain converged spectra. In order to circumvent thisproblem we propose a strategy to solve the Bethe-Salpeter equation based on adouble-grid technique coupled to a Wannier interpolation of the Kohn-Sham bandstructure. This strategy is then benchmarked for a particularly difficult case,the calculation of the absorption spectrum of GaAs, and for the well studiedcase of Si. The considerable gains observed in these cases fully validate ourapproach, and open the way for the application of the Bethe-Salpeter equationto large and complex systems.
机译:Bethe-Salpeter方程是一种用于描述体半导体中光激发的方法。它产生的光谱与实验非常吻合,但是要付出如此精确的代价是非常高的计算负担。主要瓶颈之一是获得会聚光谱所需的大量k点。为了解决这个问题,我们提出了一种基于双网格技术并结合了Kohn-Sham能带的Wannier插值的Bethe-Salpeter方程的求解策略。然后,针对一种特殊的情况,计算GaAs的吸收光谱以及对Si进行充分研究的情况,将该策略作为基准。在这些情况下观察到的可观收益完全验证了我们的方法,并为将Bethe-Salpeter方程应用于大型和复杂系统开辟了道路。

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